Mgw20n60d Igbt Power Transistor

This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics of IGBT MOSFET result in inefficient operations at high frequencies.Co–packaged IGBT’s save space, reduce assembly time and cost.Features And Specifications Of MGW20N60D IGBT MOSFET Power Transistor: Type Designator: MGW20N60D Type of IGBT Channel: N-Channel Maximum Power Dissipation (Pc), W: 142W Maximum Collector-Emitter Voltage |Vce|, V: 600V Collector-Emitter saturation Voltage |Vcesat|, V: 2.3V Maximum Gate-Emitter Voltage |Veg|, V: 20V Maximum Collector Current |Ic|, A: 20A Maximum Junction Temperature (Tj), °C: 150 Rise Time, nS: 59 Maximum Collector Capacity (Cc), pF: 2280pF High Short Circuit Capability Soft Recovery Free Wheeling Diode is included in the package MGW20N60D DataSheet Package Include: 1 x MGW20N60D IGBT IC Best online shopping website for MGW20N60D IGBT Power MOSFET Transistor  insulated gate bipolar transistor in a cheap price in Lahore Islamabad Karachi Faislabad Multan Quetta Sukkur Peshawar Rawalpindi Gujranwala and all over Pakistan.